Trudyi FTIAN. T. 20. Kvantovyie kompyuteryi, mikro- i nanoelektronika: fizika, tehnologiya, diagnostika i modelirovanie

  • Publisher: M.: Nauka
  • ISBN: 978-5-02-036976-4
  • Year: 2009
  • Pages: 247

PRICE: 242 rub.

Description of the book:

Sbornik, posvyaschennyiy 20-letiyu Fiziko-tehnologicheskogo instituta RAN, vklyuchaet v sebya stati po aktualnyim problemam mikro- i nanoelektroniki, mikro- i nanoelektromehaniki i tverdotelnyih kvantovyih kompyuterov. Rassmotrenyi perspektivyi realizatsii polnomasshtabnyih kvantovyih kompyuterov na ionnyih lovushkah v tverdotelnyih strukturah, proanalizirovan perenos elektrona v odnomernyih mnogoyamnyih strukturah. Osoboe vnimanie udeleno vajneyshim voprosam fiziki i modelirovaniya na-notranzistorov (kremnievyie v ultratonkom kremnii na izolyatore, tunnelnyie, s grafenovyim kanalom i dr.). Issledovanyi mejpodzonnyie opticheskie perehodyi v strukturah s razryivom zapreschennoy zonyi. Predstavlenyi stati po modelirovaniyu elektromigratsionnogo razrusheniya tonkoplenochnyih provodnikov, prochnosti granitsyi soedinennyih materialov v zavisimosti ot ih mikrostrukturyi i soderjaniya tochechnyih defektov, modelirovaniyu kanalov neytralizatsii istochnikov puchkov byistryih neytralov, daetsya obzor plazmennyih protsessov v tehnologii MEMS.  
Dlya spetsialistov v oblasti mikro- i nanoelektroniki.

The proceedings devoted to the 20th anniversary of Physico-Technological Institute of RAS include topical issues on micro- and nanoelectronics, micro- and nanoelectromechanical systems, and solid state quantum computers. Prospects of full-scale quantum computers on solid state ion traps are considered, and electron transport in 1 D multi-well structures is analyzed. Special focus is on physics and modeling of nanotransistors (silicon in ultra-thin body SOI, tunnel transistors, nanotransistors with graphene channel, etc.). Optical intersubband transition in broken-gap structures is studied. Articles on modeling of electromigration damage of thin-film conductors, strength of joint materials interface dependence on microstructure and point defects, and modeling of neutralization paths in sources of fast neutrals are presented. A review of plasma processes in MEMS technology is given.
For specialists in the field of micro- and nanoelectronics.